Ultrahigh-excellent single crystals of silicon carbide by alternate repetition of advancement perpendicular to c-axis The measured 3C-SiC-Si TBC (~620 MW m�?K−1) is among the the best values for all interfaces creating up of semiconductors36, about 10 situations as higher as that on the diamond-Si interfaces37, about two.5 periods as high https://www.facebook.com/permalink.php?story_fbid=pfbid0NNw1bv5aZgz2gP6Xexzvnd1Ao5UWCkERH9EPmqcWDoBnCk5qru6EFBWo3EUbjCCil&id=61560512640678&__cft__[0]=AZWFk5fQD2jgTAVDPox6QFfGnO4GhFCkTVmUz88qxE6eoi-YB9q1i4d2GzMmKCHetqmrjvDlgrtjPFTwT2bBn_j4ZTWFtVPZcAKn-U5Eq2Jq2HppTEhikD3VPLXTpulKKLpTnVqC3ZwRlVCYAAinHd8_NY38Wlg12EeLkf1DoIvxxyOiQGhTL6uA5Cggbw_G11oKNLOZSaMNAD2mLbNRgPf3&__tn__=%2CO%2CP-R